TLMW310. vishay semiconductors 1 (6) www.vishay.com document number 83143 rev. a6, 01jul02 high intensity smd led color type technology angle of half intensity white TLMW310. ingan / yag on sic 60 description this device have been designed to meet the increas- ing demand for white smd led. the package of the TLMW310. is the plcc2 (equivalent to a size b tantalum capacitor). it consists of a lead frame which is embedded in a white thermoplast. the reflector inside this package is filled with a mixture of epoxy and yag phoshor. the yag phoshor converts the blue emission partially to yellow, which mixes with the remaining blue to give white. features high efficient ingan technology chromaticity coordinate categorized according to cie1931 per packing unit luminous intensity ratio in one packing unit i vmax /i vmin 1.6 typical color temperature 5500 k esd class 1 eia and ice standard package compatible with infrared, vapor phase and wave solder processes according to cecc available in 8 mm tape reel 94 8553 applications automotive: backlighting in dashboards and switches telecommunication: indicator and backlighting in telephone and fax backlighting for audio and video equipment backlighting in office equipment indoor and outdoor message boards flat backlight for lcds, switches and symbols illumination purposes, alternative to incandescent lamps general use
TLMW310. vishay semiconductors www.vishay.com 2 (6) rev. a6, 01jul02 document number 83143 absolute maximum ratings t amb = 25 c, unless otherwise specified TLMW310., , , , parameter test conditions symbol value unit reverse voltage v r 5 v dc forward current t amb 70 c i f 20 ma surge forward current t p 10 m s i fsm 0.1 a power dissipation t amb 70 c p v 85 mw junction temperature t j 100 c operating temperature range t amb 40 to + 100 c storage temperature range t stg 40 to + 100 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ambient mounted on pc board (pad size > 16 mm 2 ) r thja 350 k/w optical and electrical characteristics t amb = 25 c, unless otherwise specified white (TLMW310.) parameter test condi- tions type symbol min. typ. max. unit luminous intensity 1) i f = 20 ma TLMW3100 i v 80 140 mcd y i f = 20 ma TLMW3101 i v 80 200 mcd i f = 20 ma TLMW3102 i v 125 320 mcd chromaticity coordinate x acc. to cie 1931 i f = 20 ma TLMW3100 x 0.33 chromaticity coordinate y acc. to cie 1931 i f = 20 ma TLMW3100 y 0.33 angle of half intensity i f = 20 ma j 60 deg forward voltage i f = 20 ma v f 3.5 4.2 v reverse voltage i r = 10 m a v r 5 v temperature coefficient of v f i f = 20 ma tc vf 4 mv/k temperature coefficient of i v i f = 20 ma tc iv 0.5 % / k 1) in one packing unit i v min./i v max. 1.6
TLMW310. vishay semiconductors 3 (6) www.vishay.com document number 83143 rev. a6, 01jul02 typical characteristics (t amb = 25 c, unless otherwise specified) p power dissipation ( mw ) v 0 10 20 30 40 50 60 70 80 90 0 102030405060708090100 t amb ambient temperature ( c ) 16191 figure 1. power dissipation vs. ambient temperature 0 5 10 15 20 25 0 102030405060708090100 t amb ambient temperature ( c ) 16192 i forward current ( ma ) f figure 2. forward current vs. ambient temperature 0 5 10 15 20 25 30 0 102030405060708090100 t amb ambient temperature ( c ) 16193 i forward current ( ma ) f mttf, confidence level 60% failure criteria i v /i v0 = 50% ii i i 5000h ii 10000h figure 3. forward current vs. ambient temperature 0.01 0.10 1.00 10.00 1 10 100 i f forward current ( ma ) 16194 i relative luminous intensity vrel figure 4. relative luminous intensity vs. forward current 1 10 100 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v f forward voltage ( v ) 16195 f i forward current ( ma ) figure 5. forward current vs. forward voltage 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 400 450 500 550 600 650 700 750 800 wavelength ( nm ) 16196 i relative luminous intensity vrel figure 6. relative luminous intensity vs. wavelength
TLMW310. vishay semiconductors www.vishay.com 4 (6) rev. a6, 01jul02 document number 83143 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 102030405060708090100 t amb ambient temperature ( c ) 16197 i relative luminous intensity vrel i f = 10 ma figure 7. rel. luminous intensity vs. ambient temperature 0.315 0.320 0.325 0.330 0.335 0.340 0.345 0 102030405060 i f forward current (ma) 16198 f chromaticity coordinate shift (x,y) x y white figure 8. chromaticity coordinate shift vs. forward current 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90 3.95 0 102030405060708090100 t amb temperature ( c ) 16199 i forward voltage ( v ) f figure 9. forward voltage vs. ambient temperature 0.4 0.2 0 0.2 0.4 i relative luminous intensity v rel 0.6 95 10319 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 figure 10. rel. luminous intensity vs. angular displacement ?? ?? ?? ?? ?? ?? ?? ?? ?? 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.20 0.25 0.30 0.35 0.40 0.45 0.50 16284 coordinates of colorgroups a = 20000k b = 10000k c = 7000k d = 6000k e = 5000k f = 4000k a b c d e f 3 4 5 . . a d65 coordinates of colorgroups figure 11. coordinates of colorgroups
TLMW310. vishay semiconductors 5 (6) www.vishay.com document number 83143 rev. a6, 01jul02 dimensions in mm 95 11314 dimensions in mm 95 10966
TLMW310. vishay semiconductors www.vishay.com 6 (6) rev. a6, 01jul02 document number 83143 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol ( 1987) and its london amendments ( 1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substanc es. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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